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Published at November 26

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment

physics.ins-det
cs.AR

Released Date: November 26, 2024

Authors: Daniel Malagon, Gabriel Torrens1, Jaume Segura1, Sebastia A. Bota

Aff.: 1Grup de Sistemes Electrònics, Departament de Física. Universitat de les Illes Balears, Palma de Mallorca, Spain.

Arxiv: http://arxiv.org/abs/2411.17198v1